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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION *With TO-220 package *High breakdown voltage *High power dissipation *Complement to type 2SC2660/2660A APPLICATIONS *For power amplifier and TV vertical deflection output applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1133 VCEO Collector-emitter voltage 2SA1133A VEBO IC ICM PT Tj Tstg Emitter-base voltage Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base -180 -6 -2.0 -3.0 30 150 -55~150 V A A W CONDITIONS Open emitter VALUE -200 -150 V UNIT V Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SA1133 2SA1133A MIN TYP. MAX UNIT 2SA1133 V(BR)CEO Collector-emitter breakdown voltage 2SA1133A IC=-5mA ,IB=0 B -150 V -180 V(BR)CBO Collector-base breakdown voltage IC=-0.5mA ,IE=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-0.5mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA B -1.0 V VBE Base-emitter on voltage IC=-400mA ; VCE=-10V -1.0 V A ICBO Collector cut-off current VCB=-200V; IE=0 -50 IEBO Emitter cut-off current VEB=-4V; IC=0 -50 A hFE-1 DC current gain IC=-150m A ; VCE=-10V 60 240 hFE-2 DC current gain IC=-400mA ; VCE=-10V 50 hFE-1 Classifications Q 60-140 P 100-240 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1133 2SA1133A Fig.2 Outline dimensions(unindicated tolerance:0.10 mm) 3 |
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